宽带低相噪双核压控振荡器

基于同相耦合拓扑结构,分析并设计了一款双核压控振荡器(VCO)。该电路通过将两个相同VCO 核 的输出同相相连,实现了在不降低谐振腔Q 值和输出信号幅度的前提下,将谐振腔的有效电感值减小一半,从而降 低了输出信号的相位噪声。该芯片采用 TPS 65 nm RFSOI CMOS 工艺制造,包括焊盘在内的芯片面积为1. 04 mm2。 测试结果表明,该VCO 可以在8. 600~12. 148 GHz (34. 2%) 的宽频带范围内连续工作,并在8. 841 GHz 处测试 的相位噪声为-108. 63 dBc/ Hz@ 1 MHz。当电源电压为1. 2 V 且不考虑测试缓冲器时,该双核VCO 消耗电流为 9. 2~11. 1 mA,对应含调谐范围的优值(FOMT)为-183. 39 ~ -187. 13 dBc/ Hz。

A Wideband Low Phase Noise Dual-core VCO

Based on the in-phase coupled topology, a dual-core voltage-controlled oscillator (VCO) is analyzed and designed. By connecting the outputs of two identical VCO cores in phase, the circuit can reduce the effective inductance of the resonator by half, without degrading the Q factor of the resonator and the amplitude of the output signal, thereby reducing the phase noise of the output signal. Fabricated in TPS 65 nm RFSOI CMOS technology, the chip covers an area of 1. 04 mm2, including the pads. Measurements show that the VCO can operate over a wide frequency band range from 8. 600 GHz to 12. 148 GHz (34. 2%) continuously, with a phase noise of -108. 63 dBc/ Hz@ 1 MHz obtained at 8. 841 GHz. Without the testing buffers, the VCO core circuit draws a current of 9. 2~11. 1 mA from a 1. 2 V power supply, achieving a figureof- merit-with-tuning-range (FOMT) of -183. 39 ~ -187. 13 dBc/ Hz.