340 GHz GaN大功率固态倍频链

随着太赫兹技术的应用和发展,对大功率太赫兹固态源的需求愈加迫切。文中基于GaN肖特基二极管(SBD)工艺设计并制造了具有高功率输出的170 GHz和340 GHz太赫兹倍频器,实现了340 GHz大功率太赫兹固态倍频链。采用多管芯GaN SBD提高器件功率承载能力,综合开展电路优化设计提升倍频性能,通过仿真研究和实验测试,验证了倍频器设计的有效性和先进性。170 GHz倍频器的实测峰值输出功率达到580 mW,倍频效率为14.5%。340 GHz倍频器的实测峰值输出功率为66 mW,倍频效率为12.5%。该太赫兹固态倍频链性能优良,在太赫兹系统中具有重要的应用价值。

A High-power 340 GHz GaN-based Solid-state Frequency Multiplier Chain

With the development of terahertz (THz) technology, there has been a great demand for high-power THz solid- state source. This paper reports a high-power 340 GHz solid-state frequency multiplier chain, in which two THz frequency doublers operating at 170 GHz and 340 GHz with high output power based on GaN Schottky barrier diode (SBD) technology are designed and fabricated. The GaN SBD chips in the design feature multiple anodes to enhance power handling capabilities, and the doubler circuits are optimized for better performance. The experimental demonstration is conducted in pulsed mode, exhibiting that the fabricated 170 GHz doubler delivers peak output power of 580 mW with 14. 5% efficiency and 340 GHz doubler delivers peak output power of 66 mW with 12. 5% efficiency. The proposed solid-state frequency multiplier chain has various advantages including high output power, which makes it fairly attractive for modern THz applications.