Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots |
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Authors: | M. Benyoucef A. Rastelli O. G. Schmidt S. M. Ulrich P. Michler |
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Affiliation: | 1.Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany ;2.5. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550, Stuttgart, Germany |
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Abstract: | We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed. |
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Keywords: | GaAs quantum dots Hierarchical selfassembly Single dot spectroscopy Room temperature luminescence Photon correlation |
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