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Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
Authors:M. Benyoucef  A. Rastelli  O. G. Schmidt  S. M. Ulrich  P. Michler
Affiliation:1.Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany ;2.5. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550, Stuttgart, Germany
Abstract:We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T  ≤  40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.
Keywords:GaAs quantum dots  Hierarchical selfassembly  Single dot spectroscopy  Room temperature luminescence  Photon correlation
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