Photoluminescence of anodized layers of CdSiAs2

CdSiAs₂ belongs to the II-IV-V₂ group of chalcopyrite semiconductors with a direct band gap of 1.51 eV at T=300 K. In this paper we investigate the spectral dependence of the steady-state photoluminescence of CdSiAs₂ anodized layers. These layers were fabricated by electrochemical anodization of unoriented p-type CdSiAs₂ wafers in an solution of HF in ethanol. It is found that a broad photoluminescence band with a maximum at the photon energy ℏω=1.82 eV at 300 K arises. This band lies deep in the fundamental absorption region of CdSiAs₂ crystals. The dependence of the parameters of the photoluminescence spectra of anodized Si, GaAs, and CdSiAs₂ layers is discussed. Fiz. Tekh. Poluprovodn. 31, 313–314 (February 1997)