CuIn(Ga)Se2-based devices via a novel absorber formation process |
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Authors: | Markus E Beck Amy Swartzlander-Guest Rick Matson James Keane Rommel Noufi |
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Affiliation: | National Renewable Energy Laboratory, PV&EM Center, 1617 Cole Blvd., Golden, CO 80401, USA |
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Abstract: | A novel pathway for the formation of copper–indium (gallium) diselenide has been developed. This two-stage process consists of (a) the formation of Cu–In–(Ga)–Se precursors, and (b) subsequent thermal treatment to form CuIn(Ga)Se2. The morphology, structure and growth mechanism for several different precursor structures prepared under various conditions were studied and correlated to the deposition parameters as well as the structure and morphology of the annealed films. Photovoltaic devices prepared from CuInSe2 and CuIn0.75Ga0.25Se2 resulted in efficiencies of 10% and 13%, respectively. |
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Keywords: | Compound semiconductor Chalcopyrite CuIn(Ga)Se2 Solar cells |
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