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| Si衬底上热壁外延制备GaAs单晶薄膜材料 | |
| 引用本文： | 刘翔,谭红琳,吴长树,张鹏翔,赵德锐,陈庭金,廖世坤,吴刚,杨家明. Si衬底上热壁外延制备GaAs单晶薄膜材料[J]. 半导体光电, 2000, 21(6): 433-434,438 |
| 作者姓名： | 刘翔 谭红琳 吴长树 张鹏翔 赵德锐 陈庭金 廖世坤 吴刚 杨家明 |
| 作者单位： | 1. 昆明理工大学，云南昆明650051 2. 云南师范大学，云南昆明650092 3. 昆明物理研究所，云南昆明650093 4. 昆明冶金研究院，云南昆明650051 |
| 基金项目： | 云南省自然科学基金;99E0009Q; |
| 摘 要： | 报道了采用热壁外延（ＨＷＥ）技术，在Ｓｉ表面生长ＧａＡｓ薄膜。先通过活化剂活化Ｓｉ表面，再采取两步生长法外延ＧａＡｓ单晶薄膜，最后进行断续多层循环退火（ＩＭＣＡ）。经电子探针（ＥＰＭＡ）、Ｒａｍａｎ光谱、Ｈａｌｌ测量和荧光（ＰＬ）光谱测试分析，证实在Ｓｉ表面获得了的４μｍ厚的ＧａＡｓ单晶薄膜。 |
| 关 键 词： | 热壁外延 异质外延 硅 砷化镓 单晶薄膜材料 |
| 文章编号： | 1001-5868(2000)06-0433-02 |
Growth of Monocrystalline GaAs Layer on Si by Hot Wall Epitaxy |
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| LIU Xiang,TANG Hong-lin,WU Chang-shu,ZHANG Peng-xiang,ZHAO De-rui,CHEN Ting-Jin,LIAO Shi-kun,WU Gang,YANG Jia-ming. Growth of Monocrystalline GaAs Layer on Si by Hot Wall Epitaxy[J]. Semiconductor Optoelectronics, 2000, 21(6): 433-434,438 | |
| Authors: | LIU Xiang TANG Hong-lin WU Chang-shu ZHANG Peng-xiang ZHAO De-rui CHEN Ting-Jin LIAO Shi-kun WU Gang YANG Jia-ming |
| Affiliation: | LIU Xiang1,TANG Hong-lin1,WU Chang-shu1,ZHANG Peng-xiang1,ZHAO De-rui1,CHEN Ting-jin2,LIAO Shi-kun3,WU Gang3,YANG Jia-ming4 |
| Abstract: | This paper reports the growth of GaAs layer on Si substrate by hot wall epitaxy (HWE). Si surface prior to epitaxy of GaAs layer is activated. Then two - step epitaxy is used to achieve GaAs layer. Finally, intermittent multi - layer cycle annealing (IMCA) is implemented to improve morphology and quality of the epitaxial layer. Measurement and analysis by electron probe micro - analysis (EPMA), Raman spectrum, Hall measurement and photo - luminescence (PL) confirm that GaAs layer with thickness of approximately 4 μm has been obtained. |
| Keywords: | hot wall epitaxy heteroepitaxy GaAs filmD |
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