不同晶种上ZnO纳米线的生长及紫外光电导特性

采用射频磁控溅射法在石英衬底上沉积了AZO和ITO透明导电膜,然后采用溶液化学法以两种导电膜为晶种分别生长ZnO纳米线。利用扫描电镜和X射线衍射等测试手段对样品进行表征,进而通过一种垂直测试结构,研究其紫外光电导特性的差异。结果表明:晶种对纳米线的生长起决定性作用,只有在结晶良好并且择优取向的AZO膜上才能生长出垂直于衬底且取向一致的ZnO纳米阵列,而在ITO膜上,ZnO纳米线的取向具有很大的随机性。AZO上垂直生长的纳米线紫外响应速度较快,且呈现良好的欧姆接触特性,但两种样品恢复时间都较长,分析认为是纳米线曝光面积不同和内部的缺陷、表面态等原因造成的。

Growth and UV Photoconduetive Properties of ZnO Nanowires Grown on Different Transparent Conductive Films

AZO and ITO transparent conductive films were deposited by RF magnetron sputtering method on quartz substrate.And then ZnO nanowires were prepared on both transparent conductive films using the solution chemical method,respectively.Scanning electron microscopy and X-ray diffraction measurements were used to characterize the samples,then a vertical structure is adopted to study the difference of the UV photoconductive properties.The results showed that the seed layer plays a decisive role in the growth of th...