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薄膜和量子点的外延生长(英文)
引用本文:吴巨,金鹏,曾一平,王宝强,王占国. 薄膜和量子点的外延生长(英文)[J]. 微纳电子技术, 2010, 47(6). DOI: 10.3969/j.issn.1671-4776.2010.06.001
作者姓名:吴巨  金鹏  曾一平  王宝强  王占国
作者单位:中国科学院半导体研究所半导体材料科学重点实验室,北京,100083
摘    要:首先简短地综述了人们关于外延薄膜材料层状(layer-by-layer)生长机制的认识;给出了作者关于自组装量子点外延生长过程的评价和观点,强调了量子点自组装生长过程的复杂性和非线性性质。在对已经发表过的实验数据进一步分析的基础上,作者对一个量子点自组装生长形成所需要的时间作了一个估算,说明这是一个非常快的过程(<10-4s)。最后,作者提出了一个理解量子点自组装生长过程机制的模型。

关 键 词:外延生长  薄膜  自组装量子点  InAs/GaAs(001)

Epitaxial Growth of a Thin Film and Quantum Dots
Wu Ju,Jin Peng,Zeng Yiping,Wang Baoqiang,Wang Zhanguo. Epitaxial Growth of a Thin Film and Quantum Dots[J]. Micronanoelectronic Technology, 2010, 47(6). DOI: 10.3969/j.issn.1671-4776.2010.06.001
Authors:Wu Ju  Jin Peng  Zeng Yiping  Wang Baoqiang  Wang Zhanguo
Abstract:The authors give a brief review on people's general view on the epitaxial growth of a thin film via the layer-by-layer growth mode.Then they have a remark on the self-assembling of quantum dots via the epitaxial growth to notice its complexity and nonlinear behavior.Further-more,based on the further analysis of the experimental data published previously,the authors have an estimate of the time scale for the growth of a quantum dot and demonstrate that it is an unexpectedly rapid process,Finally,the authors propose a preliminary conceptual framework within which the formation of quantum dots can be understood in the InAs/GaAs(001)system.
Keywords:InAs/GaAs(001)  epitaxial growth  thin films  self-assembled quantum dots  InAs/GaAs(001)
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