| 淀积条件对a-SiNx:H薄膜中含氢基团的影响 |
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| 引用本文： | 朱永福,李牧菊,杨柏梁,刘传珍,廖燕平,袁剑锋,刘雅言,申德振.淀积条件对a-SiNx:H薄膜中含氢基团的影响[J].液晶与显示,1999,14(4):279-283. |
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| 作者姓名： | 朱永福 李牧菊 杨柏梁 刘传珍 廖燕平 袁剑锋 刘雅言 申德振 |
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| 作者单位： | 1. 中国科学院长春物理研究所,北方液晶工程研究开发中心,吉林,长春,130021
2. 中国科学院长春应用化学研究所,吉林,长春,130021 |
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| 摘 要： | 利用红外光谱研究了等离子体化学气相沉积（ＰＥＣＶＤ）方法淀积的ａ－ＳiＮｘ：Ｈ薄膜。分析了气体流量比（Ｒ）、衬底温度（Ｔｓ）以及射频功率（Ｐ(ｒｆ)）的变化对ａ－ＳｉＮｘ：Ｈ薄膜中ＳｉＨ、ＮＨ和ＮＨ２基团的吸收峰强度的影响，同时研究了退火条件对ａ－ＳｉＮｘ：Ｈ薄膜中含氢基团的影响。
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| 关 键 词： | 等离子体化学气相沉积 非晶氮化硅薄膜 红外光谱 |
Influence of Deposition Conditions on H Contained Groups in a-SiNx:H Film |
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| ZHU Yong-fu,LI Mu-ju,YANG Bai-liang,LIU Chun-zhen,LIAO Yan-ping,YUAN Jian-feng,LIU Ya-yan,Shen De-zhen.Influence of Deposition Conditions on H Contained Groups in a-SiNx:H Film[J].Chinese Journal of Liquid Crystals and Displays,1999,14(4):279-283. |
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| Authors: | ZHU Yong-fu LI Mu-ju YANG Bai-liang LIU Chun-zhen LIAO Yan-ping YUAN Jian-feng LIU Ya-yan Shen De-zhen |
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| Abstract: | The effects of the deposition conditions on IR obsorption spectrum of a- SiNx:H filmdeposited in PECVD system has been studied. We focused on the dependence of spectralintensity of SiH, NH and NH2 group on the deposition conditions, such as the ratio of gasflow rate, substrate temperature, RF glow power and so on. Moreover, the H containedgroups in annealed a- SiN.:H film has also been investigated in this paper |
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| Keywords: | plasma enhanced chemical vapor depositions amorphous silicon nitride film infrared spectrum |
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