Preparation of In2O3 octahedrons by heating InCl3 aqueous solution on the Si substrate |
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| Authors: | Heqing Yang Hua Zhao Wenyu Yang |
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| Affiliation: | a Key Laboratory of Macromolecular Science of Shaanxi Province, School of Chemistry and Materials Science, Shaanxi Normal University, Xi’an 710062, China
b Advanced Material Analysis and Test Center, Xi’an University of Technology, Xi’an 710048, China |
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| Abstract: | In2O3 octahedrons have been synthesized by heating InCl3 aqueous solution on the Si substrate at 400-900 °C for 2 h. The average size of In2O3 octahedrons is decreased by increasing the heating temperature. The In2O3 octahedrons are single-crystalline with the body-centered cubic structure and have controllable sizes in the range of 0.7-1.0 μm. A possible mechanism was also proposed to account for the formation of In2O3 octahedrons. A strong photoluminescence with a peak at 458 nm was observed from the In2O3 octahedrons at room temperature. This emission can be attributed to oxygen vacancies and indium-oxygen vacancy centers. |
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| Keywords: | A Oxides A Semiconductors B Crystal growth C Electron microscopy D Luminescence |
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