| Pb离子辐照注碳a-SiO2薄膜的光致发光性能 |
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| 引用本文： | 刘纯宝,赵志明,王志光. Pb离子辐照注碳a-SiO2薄膜的光致发光性能[J]. 核技术, 2011, 0(10): 740-744 |
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| 作者姓名： | 刘纯宝 赵志明 王志光 |
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| 作者单位： | 菏泽学院物理系;中国科学院近代物理研究所;西安理工大学材料科学与工程学院; |
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| 基金项目： | 国家自然科学基金(No.10475102); 菏泽学院科研基金(No.XY09WL02),菏泽学院博士基金(No.XY10BS02)资助 |
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| 摘 要： | 用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,进行120 keV C离子注入和950 MeV Pb离子辐照,用荧光光谱分析样品发光特性的改变.结果发现,C离子注入和高能Pb离子辐照均能显著影响样品的发光特性,且荧光光谱的改变强烈依赖于注入和辐照剂量,预示不同注入和辐照剂量将导致不同的发光结构形成.对注入和辐照造成薄膜...
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| 关 键 词： | 光致发光谱 重离子辐照 离子注入 |
Photoluminescence effects of a-SiO_2 films implanted with C ions and irradiated by Pb ions |
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| LIU Chunbao, ZHAO Zhiming WANG Zhiguang. Photoluminescence effects of a-SiO_2 films implanted with C ions and irradiated by Pb ions[J]. Nuclear Techniques, 2011, 0(10): 740-744 |
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| Authors: | LIU Chunbao ZHAO Zhiming WANG Zhiguang |
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| Affiliation: | LIU Chunbao1,2 ZHAO Zhiming3 WANG Zhiguang2 1(Department of Physics,Heze University,Heze 274015,China) 2(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China) 3(School of Materials Science and Engineering,Xi'an University of Technology,Xi'an710000,China) |
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| Abstract: | Amorphous SiO2 films of about 1 ?m in thickness were thermally grown on single crystalline silicon.The samples were implanted at room temperature(RT) with 120 keV C ions to doses ranging from 1.0 ? 1016 to 8.6 ? 1017 ions/cm2,and then irradiated at RT with 950 MeV Pb ions to 5.0? 1011,1.0 ? 1012 and 3.8 ? 1012 ions/cm2,respectively.Photoluminescence(PL) properties of the samples were investigated using a fluorescent spectroscopy at RT.The results show that Pb ion irradiation affected significantly the PL pr... |
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| Keywords: | Photoluminescence Heavy ion irradiation Ion implantation |
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