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Aluminum Nitride Thin Films on an LTCC Substrate |
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| Authors: | Jung W Lee Jerome J Cuomo Yong S Cho Roupen L Keusseyan |
| Affiliation: | Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907; School of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea; DuPont Electronic Technologies, Research Triangle Park, North Carolina 27709 |
| Abstract: | Aluminum nitride thin films deposited on a low-temperature co-fired ceramics substrate by reactive magnetron sputtering were investigated with regard to their crystal orientation and microstructural characteristics. Strong c -axis orientations of AlN thin films were observed when either a higher deposition temperature or an RF bias was adopted. This orientation was believed to be responsible for the high thermal conductivity of 26 W/mK for the AlN films deposited at 700°C under 25-W bias. Photoluminescence spectrum in the wavelength range of 350–650 nm was analyzed to prove the involvement of potential oxygen-related defects in the thin films. |
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