| 高功率二极管真空绝缘结构设计与实验 |
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| 引用本文： | 伍友成,杨宇,耿力东,郝世荣.高功率二极管真空绝缘结构设计与实验[J].电力电子技术,2010,44(1). |
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| 作者姓名： | 伍友成 杨宇 耿力东 郝世荣 |
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| 作者单位： | 中国工程物理研究院,四川,绵阳,621900 |
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| 摘 要： | 介绍了二极管真空绝缘中真空沿面闪络理论、绝缘结构设计要点以及沿面闪络域值估算方法,提出二极管结构优化设计的思路和方法,通过数值计算对一种高功率二极管真空绝缘设计进行了优化,一方面降低了三相点的电场强度和绝缘体沿面电场强度,另一方面提高了绝缘体表面的沿面击穿场强,从而大大改善了二极管绝缘体的绝缘性能,延长其使用寿命。实验结果表明优化后的二极管绝缘结构满足设计指标,在正常工作电压下未发生击穿现象。
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| 关 键 词： | 真空绝缘 二极管 沿面闪络 击穿场强 |
Design and Experiments of High Power Diode Insulation |
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| WU You-cheng,YANG Yu,GENG Li-dong,HAO Shi-rong.Design and Experiments of High Power Diode Insulation[J].Power Electronics,2010,44(1). |
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| Authors: | WU You-cheng YANG Yu GENG Li-dong HAO Shi-rong |
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| Affiliation: | China Academy of Engineering Physics Institute of Fluid Physics;Mianyang 621900;China |
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| Abstract: | The theory on pulsed flashover of insulators surface in vacuum is introduced.The keys of diode insulation design in vacuum and the way of estimating flashover threshold are included.The method to optimize the diode insulation design in vacuum is presented.The insulation configuration is optimazed by numerical simulation,the flashover threshold is advanced and the work field of insulator surface is depressed.So the insulation capability of the diode insulator is improved greatly.The experimental results show... |
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| Keywords: | vacuum insulation diode flashover breakdown field strength |
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