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Electrical demonstration of thermally stable Ni silicides on Si1−xCx epitaxial layers |
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| Authors: | V. Machkaoutsan P. Verheyen Y. Zhang A. Franquet R. Loo A. Lauwers C. Kerner E. Granneman P. Absil |
| Affiliation: | a ASM Belgium N.V., Kapeldreef 75, B-3001 Leuven, Belgium b IMEC, Kapeldreef 75, B-3001 Leuven, Belgium c ASM America Inc., 3440 East University Drive, Phoenix, AZ, 85034, USA d Samsung Assignee at IMEC, Kapeldreef 75, B-3001 Leuven, Belgium e ASM Europe B.V., Versterkerstraat 8, 1322 AP Almere, The Netherlands f Electrical Engineering Dept., INSYS, K.U. Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium g Instituut voor Kern- en Stralingsfysica, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium |
| Abstract: | In this paper we report on electrical demonstration of thermally stable Ni silicides. It has been shown that when a sacrificial Si1−xCx epilayer is grown in the source-drain areas of NMOS transistors prior to silicidation, Ni silicides can withstand a 30 min anneal at 750 °C and demonstrate excellent electrical performance. We have observed carbon segregation at the NiSiC/Si1−xCx interface which can explain the increased NiSiC thermal stability. We have experimentally demonstrated feasibility of CMOS device implementation of thermally stable Ni silicides. |
| Keywords: | Epitaxy SiC Silicide Ni Thermal stability DRAM |
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