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SDRAM存储器的交错机制及其应用
引用本文:于银涛,赵昕,乔丽萍.SDRAM存储器的交错机制及其应用[J].计算机工程与设计,2008,29(21).
作者姓名:于银涛  赵昕  乔丽萍
作者单位:1. 北京计算机技术及应用研究所,北京,100854
2. 第二炮兵,北京,100039
摘    要:在分析sDRAM(同步动态随即存取存储器)存储器的结构和访问时序的基础上,介绍了SDRAM的交错机制,并分析了交错机制对SDRAM访问性能的影响.通过对基于页的交错和基于体的交错方式的对比分析,得出基于页的交错方式具有更好的访问性能的结论,并通过实际测试证明了这一结论.测试结果表明,在相同的硬件条件下,采用基于页的交错方式比基于体的交错方式提高4%~5%的性能.

关 键 词:同步动态随即存取存储器  存储体    交错  基于页的交错  基于体的交错

Application of interleaving mechanism of SDRAM
YU Yin-tao,ZHAO Xin,QIAO Li-ping.Application of interleaving mechanism of SDRAM[J].Computer Engineering and Design,2008,29(21).
Authors:YU Yin-tao  ZHAO Xin  QIAO Li-ping
Affiliation:YU Yin-tao1,ZHAO Xin2,QIAO Li-ping2(1.Beijing Computer Technology , Application Institute,Beijing 100854,China,2.Second Missile Army,Beijing 100039,China)
Abstract:The architecture and access flow of SDRAM is described,the interleaving mechanism of SDRAM is described,and how this mechanism affects the performance is analyzed.Contrasted the differences between PBI(page-based interleaving) and BBI(bank-based interleaving),a conclusion is made that PBI has a better performance on memory access.As proved by the experimentation,SDRAM in PBI works 4%~5% faster than that in BBI.
Keywords:SDRAM  bank  page  interleaving  PBI(page based interleaving)  BBI(bank based interleaving)  
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