Etch characteristics of IrMn thin films using an inductively coupled plasma of CH3OH/Ar |
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Authors: | Yu Bin XiaoEun Ho Kim Seon Mi KongChee Won Chung |
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Affiliation: | Department of Chemical Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea |
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Abstract: | An inductively coupled plasma reactive ion etching of IrMn magnetic thin films patterned with Ti hard mask was studied in a CH3OH/Ar gas mix. As the CH3OH concentration increased, the etch rates of IrMn thin films and Ti hard mask decreased, while the etch profiles improved with high degree of anisotropy. The effects of coil rf power, dc-bias voltage to substrate and gas pressure on the etch characteristics were investigated. The etch rate increased and the etch profile improved with increasing coil rf power, dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy revealed that the chemical reaction between IrMn films and CH3OH gas occurred, leading to the clean and good etch profile with high degree of anisotropy of 90°. |
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Keywords: | IrMn Inductively coupled plasma reactive ion etching CH3OH/Ar Ti hard mask |
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