High-frequency magneto-electrical properties of Zn1 − x − yAlxCoyO thin films |
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Authors: | Ming-Feng KuoChao-Ming Fu Chao-Yi HsuJung-Chuan Lee Yu-Hua LeeChia-Ou Chang Chan-Shin Chou |
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Affiliation: | a Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwanb Department of Physics, National Taiwan University, Taipei, Taiwanc Department of Physics, National Cheng Kung University, Tainan, Taiwan |
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Abstract: | The Al doping effects on high-frequency magneto-electric properties of Zn1 − x − yAlxCoyO (x = 0-10.65 at.%) thin films were systematically studied. In the current work, the Zn1 − x − yAlxCoyO thin films were deposited by magnetron co-sputtering onto quartz substrates. The magneto-impedance spectra of the thin films were measured by an impedance analyzer. Among all the doped films studied, the thin film with 6.03 at.% Al-doping showed the highest ac conductivity and relaxation frequency. To characterize the relaxation mechanism underlying the magneto-electric properties, a Cole-Cole impedance model was applied to analyze the impedance spectra. The analyzed result showed that the magneto-impedance of the Zn1 − x − yAlxCoyO is contributed by multiple processes of magnetization dynamics and dielectric relaxation. The results imply that Zn1 − x − yAlxCoyO may be applicable for high-frequency magneto-electric devices. |
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Keywords: | Diluted magnetic semiconductors Impedance spectroscopy |
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