IGCT-MMC中二极管反向恢复特性分析与测试

二极管的反向恢复特性在IGCT-MMC中起着重要的作用.首先介绍快恢复二极管的反向恢复特性,然后在IGCT-MMC拓扑中介绍快恢复二极管的开关行为,最后搭建适用于IGCT-MMC测试的双脉冲实验平台,并对比了3种商业化快恢复二极管产品的反向恢复特性.最终的测试结果表明,快恢复二极管的反向恢复峰值电流和功率与di/dt呈...

Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC

The reverse recovery characteristics of the diode plays an important role in IGCT-MMC. This paper firstly introduces the reverse recovery characteristics of the fast recovery diode. Then the switching behaviors of the fast recovery diode in the IGCT-MMC topology are analyzed. Finally a double-pulse experimental platform is built for IGCT-MMC testing, and the reverse recovery characteristics of three commercial fast recovery diode products are compared. The test results show that the reverse recovery peak current and power of the fast recovery diode have a linear relationship with di/dt, and the testing result at high temperature are higher than that at room temperature. While under the same di/dt and temperature conditions, different fast recovery diodes have different reverse recovery peak currents and powers in IGCT-MMC. As a result, it is necessary to choose a suitable di/dt according to the safe working area of the diode in IGCT-MMC.