碳纳米管水平阵列的结构控制生长：进展与展望

碳纳米管水平阵列是指生长于平整基底上且与沿基底平行排列的一种碳纳米管类型。与其他类型的碳纳米管相比，水平阵列类型的碳纳米管具有很低的结构缺陷和优异的力学、电学、热学性能，在微电子、超强纤维、航空航天等尖端领域有广阔和重要的应用前景。这些应用对碳纳米管的缺陷浓度、手性分布、半导体型纯度及阵列密度等指标的要求十分严苛，因而碳纳米管水平阵列的结构控制与批量制备是其实现性能应用的关键。在过去的近三十年中，研究者们已在碳纳米管水平阵列的结构控制生长上取得了大量进展，但同时也面临不少挑战。本文对碳纳米管水平阵列的结构控制、批量制备及前沿应用的研究进展进行了回顾，并对其面临的挑战和未来发展方向进行了讨论。

Synthesis and structure control of horizontally aligned carbon nanotubes: progress and perspectives

The horizontal array of carbon nanotubes refers to a type of carbon nanotubes grown on a flat substrate and arranged parallel to the substrate. Compared with other types of CNTs, HACNT arrays have much fewer defects and superior mechanical, electrical and thermal properties, and therefore have great application prospects in various frontier fields such as microelectronics, super fibers and aerospace. In these cases, defect concentrations, chirality distributions, semiconducting purities and number densities of HACNT arrays are strictly required to meet the demand. Hence, efficient structure control and mass production of HACNT arrays are crucial to the realization of ideal properties and the corresponding application. In the past near thirty years, researchers have made great progress in the structure-controlled growth of HACNT arrays, while many challenges still exist. The progress in structure control, mass production and advanced application of HACNT arrays are reviewed. The significant challenges and development directions for the synthesis and application of HACNT arrays are also discussed.