III-V alloy heterostructure high speed avalanche photodiodes |
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| Authors: | Law H Nakano K Tomasetta L |
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| Affiliation: | Rockwell International Science Center, Thousand Oaks, CA, USA; |
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| Abstract: | Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaSb, GaAlAsSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from0.4 to 1.8 mum. Early stages of development show very encouraging results. High speed response of <35 ps and high quantum efficiency >95 percent have been obtained. The dark currents and the excess avalanche noise will also be discussed. A direct comparison of GaAlSb, GaAlAsSb, and InGaAsP avalanche photodiodes is given. |
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