| High sp~3 content hydrogen-free amorphous diamond: an excellent electron field emission material |
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| 引用本文： | 茅东升,赵俊,李炜,王曦,柳襄怀,诸玉坤,李琼,徐静芳. High sp~3 content hydrogen-free amorphous diamond: an excellent electron field emission material[J]. 中国科学E辑(英文版), 1999, 0(1) |
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| 作者姓名： | 茅东升 赵俊 李炜 王曦 柳襄怀 诸玉坤 李琼 徐静芳 |
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| 作者单位： | MAO Dongsheng ZHAO Jun LI Wei WANG Xi LIU Xianghuai(Ion Beam Laboratory，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China)ZHU Yukun LI Qiong XU Jingfang(Department of Electronics Science and Technology，East China Normal University，Shanghai 200062，China) |
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| 基金项目： | Project supported by the National High-Tech Program of China |
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| 摘 要： | Details are given of a study of the characteristics of field-induced electron emission from hydrogen-free high sp~3 content (>90 % ) amorphous diamond (a-D) film deposited on heavily doped (p<0.01 Ω·cm) n-type monoerystalline Si (111 ) substrate. It is demonstrated that a-D film has excellent electron field emission properties. The emission current can reach 0.9 μA at applied field as low as 1 V/μm, and the emission current density can be ahout several mA/cm~2 under 20 V/μm. The emission current is stable when the beginning current is at 50 μA within 72 h. Uniform fluorescence display of electron emission from the whole face of the a-D film under the electric field of 10-12 V/μm is also observed. The contribution of excellent electron emission property results from the smooth, uniform, amorphous surface and high sp~3 content of the a-D film.
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High sp~3 content hydrogen-free amorphous diamond: an excellent electron field emission material |
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| MAO Dongsheng ZHAO Jun LI Wei WANG Xi LIU Xianghuai. High sp~3 content hydrogen-free amorphous diamond: an excellent electron field emission material[J]. Science in China(Technological Sciences), 1999, 0(1) |
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| Authors: | MAO Dongsheng ZHAO Jun LI Wei WANG Xi LIU Xianghuai |
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| Abstract: | |
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| Keywords: | hydrogen-free amorphous diamond film sp3 electron field emission work function. |
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