|
|||||
|
|
InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser |
|
| Authors: | Noguchi Y. Suzuki Y. Matsuoka T. Nagai H. |
| Affiliation: | NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan; |
| Abstract: | A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode. |
| Keywords: | |