Fabrication of ZnO-based thick film varistors with high potential gradient |
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Authors: | Lei Ke Dongmei Jiang Xueming Ma |
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Affiliation: | State Key Laboratory of Precision Spectroscopy,Department of Physics,East China Normal University,Shanghai 200062,China |
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Abstract: | ZnO-based thick film varistors have been fabricated by Y2O3 doping and low-temperature sintering, of which the sample with the best electrical properties has a high potential gradient
value of 3159.4 V/mm. The effects of Y2O3 doping concentration and sintering temperature on the potential gradient of the samples were systematically investigated.
The results show that the sample with the best electrical properties can be obtained by doping 0.08 mol% Y2O3 and sintering at 725°C. Under these optimum preparation conditions, the leakage current and the nonlinear coefficient are
found to be 36.4 μA and 13.1. The sample with the best electrical properties has a grain size of 1.290 μm, a single grain
boundary voltage of 4.08 V, a barrier height of 0.81 eV, and a depletion layer width of 10.2 nm, which are determined by thermionic
emission. Small grain size with good grain boundary characteristics is beneficial to improve the electrical properties of
varistors and promote the potential gradient. |
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Keywords: | condensed matter physics thick film varistors low-temperature sintering doping potential gradient |
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