Characterization of Cu(In,Ga)Se2 thin films prepared by thermal crystallization on Mo/glass substrate

Thin films of Cu(In,Ga)Se₂ were prepared by thermal crystallization on the sputtered Mo/substrate and characterized. MoSe₂ layer was formed at the interface between Cu(In,Ga)Se₂ and Mo layers after the thermal crystallization. The graded Ga concentration in crystallized Cu(In,Ga)Se₂ thin films was confirmed. Cu(In,Ga)Se₂ thin films prepared on the Mo/soda-lime glass had large and columnar grains rather than those on the Mo/quartz substrate.