ZnO薄膜在微光像增强器中的潜在应用

ZnO 薄膜是一种新型的宽带隙透明氧化物薄膜材料，具有优良的物理和化学特性。在微光像增强器中具有多方面的潜在应用。通过对ZnO 材料晶格参数等的研究， 发现可以作为制备高质量GaN 紫外光电阴极的缓冲层。通过对ZnO 能带的研究，发现ZnO 本身还可以独立的作为负电子亲和势光电阴极材料，一旦p 型ZnO 制备获得成功，将更有利于形成负电子亲和势光电阴极。此外，采用蒙特卡罗模拟的方法发现ZnO 薄膜比传统的Al2O3 防离子反馈膜对碳等正离子具有更强的阻挡作用，有可能取代Al2O3 薄膜用于制备三代微光器件防离子反馈膜。ZnO 薄膜还具有较高的二次电子发射系数和适合的电阻率，可以用来制备Si 微通道板打拿极。

Potential application of ZnO thin film in the low-light-level image intensifier

ZnO thin film is a new type of wide bandgap oxide semiconductors, it has excellent physical and chemical properties. It has potential applications in the low-light-level image intensifier. It was found that ZnO thin film can be used as the buffer layer to fabricate GaN UV photocathode with high performance by the investigation on the lattice parameter of ZnO material. It was indicated that ZnO thin film could be used as the negative-affinity (NEA) photocathode itself. Once the p-type ZnO obtained, it was more benefit for the formation of NEA photocathode. Furthermore, according to the Monte Carlo simulation results, it was shown that the stopping ability of ZnO thin film on positive ions was stronger than that of traditional Al2O3 ion barrier film. So ZnO thin film can substitute for Al2O3 thin films and be used as the ion barrier film in the third generation low-light-level image intensifier. It is also found that ZnO can be used as the dynode due to its high secondary electron emission and suitable resistivity.