| 铜掺杂多孔硅的光致发光及其载流子的复合过程 |
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| 引用本文： | 薛清,于育民. 铜掺杂多孔硅的光致发光及其载流子的复合过程[J]. 微纳电子技术, 2007, 44(9): 878-880 |
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| 作者姓名： | 薛清 于育民 |
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| 作者单位： | 1. 淮海工学院,数理科学系,江苏,连云港,222005
2. 南阳理工学院,应用数学系,河南,南阳,473000 |
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| 摘 要： | 采用浸泡镀敷的方法在多孔硅表面形成了一镀铜层,通过对掺铜前后多孔硅的光致发光(PL)谱和傅里叶变换红外(FTIR)吸收光谱的研究,讨论了铜在多孔硅表面的吸附对其光致发光的影响。实验表明,掺铜多孔硅的光致发光谱出现两个发光带,其中能量较低的发光带随主发光带变化,并使多孔硅的发光峰位蓝移。多孔硅发光峰位的蓝移,是由于在发生金属淀积的同时伴随着多孔硅表面Si的氧化过程(纳米Si氧化为SiO2)的缘故。
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| 关 键 词： | 多孔硅 光致发光 傅里叶变换红外 浸泡镀敷 |
| 文章编号： | 1671-4776（2007）09-0878-03 |
| 修稿时间： | 2006-11-30 |
Carrier Recombination Processes and Photoluminescence in Copper-Doped Porous Silicon |
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| XUE Qing,YU Yu-min. Carrier Recombination Processes and Photoluminescence in Copper-Doped Porous Silicon[J]. Micronanoelectronic Technology, 2007, 44(9): 878-880 |
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| Authors: | XUE Qing YU Yu-min |
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| Affiliation: | 1.Department of Mathematics and Physics, Huaihai Institute of Technology, Lianyungang, 222005, China; 2.Department of Mathematics, Nanyang Institute of Technology, Nanyang, 473000, China |
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| Abstract: | The optical properties of transition-metal(copper)doped porous silicon by immersion plating in metal ion solutions(CuCl2)were reported.Immersion or electroless plating refered to the plating of soluble metal ions onto a base material without applying a bias.In order to research the influence of copper-doping on photoluminescence of PS,the photoluminescence spectrum and the Fourier transform infrared(FTIR)spectroscopy were measured.The experiments indicate that only one photoluminescence band is detected before copper doping,and two luminescence bands are observed after the copper doping.In the light of quantum confinement model and the deep energy levels introduced by the impurities,it is concluded that the above-mentioned luminescence bands are related to the specific dopants. |
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| Keywords: | porous silicon(PS) photoluminescence FTIR immersion plating |
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