| 射频功率对非晶硅薄膜光电性能的影响 |
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| 引用本文： | 山秀文,雷青松,薛俊明,杨瑞霞,安会静,李广.射频功率对非晶硅薄膜光电性能的影响[J].真空,2011,48(6):29-31. |
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| 作者姓名： | 山秀文 雷青松 薛俊明 杨瑞霞 安会静 李广 |
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| 作者单位： | 1. 河北工业大学信息工程学院,天津,300401
2. 河北汉盛光电科技有限公司,河北衡水,053000 |
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| 摘 要： | 采用等离子体辅助化学气相沉积(PECVD)技术,在Coming Eg 2000玻璃上制备非晶硅薄膜,研究了射频功率对薄膜光电性能的影响.结果表明:通过调节功率可获得具有高折射率,高吸收系数,低暗电导率的非晶硅薄膜.
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| 关 键 词： | 非晶硅薄膜 折射率 吸收系数 光学带隙 暗电导率 |
Effect of RF power on the photoelectric properties of amorphous silicon thin films |
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| SHAN Xiu-wen,LEI Qing-song,XUE Jun-ming,YANG Rui-xia,AN Hui-jing,LI Guang.Effect of RF power on the photoelectric properties of amorphous silicon thin films[J].Vacuum,2011,48(6):29-31. |
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| Authors: | SHAN Xiu-wen LEI Qing-song XUE Jun-ming YANG Rui-xia AN Hui-jing LI Guang |
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| Affiliation: | SHAN Xiu-wen1,LEI Qing-song2,XUE Jun-ming2,YANG Rui-xia1,AN Hui-jing1,LI Guang1 (1.The College of Information Engineering,Hebei university of technology,Tianjin 300401,China,2.China Hisun PV Technology Co.,Ltd,Hengshui 053000,China) |
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| Abstract: | Amorphous silicon thin film was fabricated by plasma enhanced chemical vapor deposition on the Corning Eg 2000 glass.The effects of RF power on the photoelectric properties of the film were studied.It is indicated that amorphous silicon thin film with high refractive index,high absorption coefficient and low dark conductivity can be obtained by adjusting the RF power. |
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| Keywords: | a-Si thin film refractive index absorption coefficient optical band gap dark conductivity |
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