| 磁控溅射制备ITO薄膜光电性能的研究 |
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| 引用本文： | 马卫红,蔡长龙. 磁控溅射制备ITO薄膜光电性能的研究[J]. 真空, 2011, 48(6) |
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| 作者姓名： | 马卫红 蔡长龙 |
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| 作者单位： | 西安工业大学光电工程学院,陕西西安,710032 |
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| 摘 要： | 采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.
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| 关 键 词： | 直流磁控溅射 ITO薄膜 工艺参数 光电特性 |
Study of photoelectrical properties of ITO thin films prepared by magnetron sputtering |
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| MA Wei-hong,CAI Chang-long. Study of photoelectrical properties of ITO thin films prepared by magnetron sputtering[J]. Vacuum(China), 2011, 48(6) |
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| Authors: | MA Wei-hong CAI Chang-long |
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| Affiliation: | MA Wei-hong,CAI Chang-long(School of the optoelectrical engineering,Xi'an Technological University,Xi'an 710032,China) |
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| Abstract: | ITO thin films were prepared on glass substrates by DC magnetron sputtering technology.The transmittance in visible region and resistivity of the ITO films was tested by spectrophotometer and four-probe instrument,respectively.The effects of sputtering pressure,oxygen-argon flow ratio and sputtering power on the photoelectrical properties of ITO thin films were investigated.The results show that,the optimum process parameters for ITO film deposition are: sputtering pressure of 0.6Pa,oxygen-argon flow ratio ... |
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| Keywords: | DC magnetron sputtering ITO thin film process parameters photoelectric properties |
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