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| 外加偏压对未退火Co/n-poly-SiGe肖特基接触特性的影响 | |
| 引用本文： | 王光伟,姚素英,徐文慧,马兴兵. 外加偏压对未退火Co/n-poly-SiGe肖特基接触特性的影响[J]. 真空, 2011, 48(5) |
| 作者姓名： | 王光伟 姚素英 徐文慧 马兴兵 |
| 作者单位： | 1. 天津大学电信学院,天津300072;天津职业技术师范大学电子工程学院,天津300222 2. 天津大学电信学院,天津,300072 3. 天津职业技术师范大学电子工程学院,天津,300222 |
| 摘 要： | 采用直流离子束溅射法,在n型单晶硅衬底上淀积Si1-xGex薄膜.俄歇电子谱(AES)测得Si1-xGex薄膜的Ge含量约为0.15.对薄膜进行高温磷扩散后,经XRD测试为多晶态,即得n-poly-Si0.85Ge0.15.在n-poly-Si0.85Ge0.15上溅射一层薄的Co膜,做成Co/n-poly-Si085Ge0.15肖特基结样品.在90～332 K范围对未退火样品做I-V-T测试.研究发现,随着外加偏压增大,表观理想因子缓慢上升,肖特基势垒高度(SBH)下降.基于SBH的不均匀分布建模,得到了二者近似为线性负相关的结论. |
| 关 键 词： | 变温I-V测试 外加偏压 肖特基结 表观理想因子 肖特基势垒高度的不均匀性 |
Effect of external bias on Schottky contact characteristics of unannealed Co/n-poly-SiGe |
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| WANG Guang-wei,YAO Su-ying,XU Wen-hui,MA Xing-bing. Effect of external bias on Schottky contact characteristics of unannealed Co/n-poly-SiGe[J]. Vacuum(China), 2011, 48(5) | |
| Authors: | WANG Guang-wei YAO Su-ying XU Wen-hui MA Xing-bing |
| Affiliation: | WANG Guang-wei1,2,YAO Su-ying1,XU Wen-hui2,MA Xing-bing2(1.Telecommunication College,Tianjin University,Tianjin 300072,China,2.School of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China) |
| Abstract: | On n-type monocrystalline Si substrates,the Si1-xGex films were deposited by DC ion beam sputtering technique.The Ge percentage of 15% in the as-deposited Si1-xGex film was determined approximately by AES spectra.The Si0.85Ge0.15 films were doped with phosphorus at high temperature through thermal diffusion to form n-type polycrystalline films,the n-poly-Si0.85Ge0.15,which is verified by XRD.And the Co/n-poly-Si0.85Ge0.15/n-Si Schottky junctions were made by sputtering Co.In the measuring temperature range ... |
| Keywords: | variable temperature I-V testing external bias schottky junction apparent ideality factor inhomogeneity of schottky Barrier height |
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