反应溅射制备AlN薄膜靶中毒机制的研究

反应磁控溅射方法制备AlN薄膜是一种很普遍的方法,但采用该方法制备在衬底上形成符合计量比的AlN化合物时,在靶材表面也会形成该化合物。这就是所谓的靶中毒现象,该现象会导致溅射产额降低从而引起沉积速率下降,因此是一种不利的影响。为了调查靶中毒的机制,本文采用TRIDYN程序来研究制备AlN薄膜时靶表面化合物的形成过程。结果表明化学吸收和离子注入是中毒层形成的两个主要的机制,但是该两种机制对中毒贡献的程度是不同的。通常情况下可以只考虑离子注入机制。本文还讨论了减小靶中毒的措施,在低压下可以极大地降低靶中毒程度,但为了得到符合化学计量比的AlN薄膜,需要提高衬底和靶材的面积比。

Target Poisoning Mechanisms in Growth of AIN Films by Reactive Magnetron Sputtering

The possible mechanisms responsible for the target poisoning in the growth of the AlN films by reactive magnetron sputtering were simulated with a TRYDIN software package.In the simulation,the impacts of various surface phenomena,such as physi-sorption,chemi-sorption,diffusion and implantation of reactive ions,were evaluated.The simulated results show that the implantation of the reactive ion outweighs the chemi-sorption in formation of the poisoned-layer on the target surfaces.Possible measures to alleviat...