| 射频反应磁控溅射法制备N掺杂p型氧化亚铜薄膜 |
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| 引用本文： | 林龙,李斌斌,鲁林峰,沈鸿烈,刘斌. 射频反应磁控溅射法制备N掺杂p型氧化亚铜薄膜[J]. 真空科学与技术学报, 2011, 31(5): 570-573. DOI: 10.3969/j.issn.1672-7126.2011.05.12 |
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| 作者姓名： | 林龙 李斌斌 鲁林峰 沈鸿烈 刘斌 |
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| 作者单位： | 南京航空航天大学材料科学与技术学院 南京210016 |
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| 基金项目： | 江苏省科技计划项目资助(SBK200910177); 南京航空航天大学基本科研业务费专项科研项目资助(NS2010160) |
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| 摘 要： | 通过射频反应磁控溅射方法在玻璃衬底上制备N掺杂的Cu2O薄膜,采用X射线衍射、分光光度计、X射线光电子能谱和霍尔效应等检测,研究了氮气掺杂对Cu2O薄膜性能的影响。结果表明:随着N原子的掺入,薄膜的结晶质量下降,光学带隙从2.28 eV升至2.47 eV左右,同时薄膜的电学性能趋于稳定。当N2/O2流量比率为0.6时,薄膜电阻率为1.5Ω.cm,空穴浓度为2.16×1019cm-3,霍尔迁移率为0.5 cm2.V-1.s-1。
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| 关 键 词： | 氧化亚铜 磁控溅射 霍尔效应 X射线光电子谱 |
Growth and Characterization of N-Doped p-Type Cu2O Films by RF Reactive Magnetron Sputtering |
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| Lin Long,Li Binbin,Lu Linfeng,Shen Honglie,Liu Bin. Growth and Characterization of N-Doped p-Type Cu2O Films by RF Reactive Magnetron Sputtering[J]. JOurnal of Vacuum Science and Technology, 2011, 31(5): 570-573. DOI: 10.3969/j.issn.1672-7126.2011.05.12 |
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| Authors: | Lin Long Li Binbin Lu Linfeng Shen Honglie Liu Bin |
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| Affiliation: | Lin Long,Li Binbin,Lu Linfeng,Shen Honglie,Liu Bin(College of Material Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China) |
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| Abstract: | The N-doped,p-type Cu2O films were deposited by rf reactive magnetron sputtering on glass substrates.The impacts of the growth conditions,including the N-doping levels,ratio of the N2/O2 flow rates,and sputtering power,on its properties were studied.Its microstructures and properties were characterized with X-ray diffraction,X-ray photoelectron spectroscopy(XPS),ultra-violet visible light(UV-Vis) spectroscopy,and Hall-effect measurements.The results show that the N impurity content and the ratio of the N2/O... |
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| Keywords: | Cu2O Magnetron sputtering Hall effect XPS |
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