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| 不同氩气与氢气流量比对硼掺杂纳米金刚石膜的影响 | |
| 引用本文： | 姜兆炎,彭鸿雁,姜宏伟,尹龙承. 不同氩气与氢气流量比对硼掺杂纳米金刚石膜的影响[J]. 真空, 2011, 48(5) |
| 作者姓名： | 姜兆炎 彭鸿雁 姜宏伟 尹龙承 |
| 作者单位： | 牡丹江师范学院新型炭基功能与超硬材料省重点实验室,黑龙江牡丹江,157012 |
| 基金项目： | 黑龙江省自然科学基金项目(E200823); 黑龙江省科技攻关项目(GC06A213); 黑龙江省教育厅重点科技项目(11551z016); 哈尔滨工业大学城市水资源与水环境国家重点实验室开放基金资助课题(QA200805) |
| 摘 要： | 采用直流热阴极PCVD方法,以B(OCH3)3作为硼源,通过改变氩气与氢气流量比,在p型Si衬底上沉积了硼掺杂纳米金刚石膜.研究了不同氩气与氢气流最比对掺硼金刚石膜生长的影响.采用扫描电子显微镜、拉曼光谱仪、X射线衍射仪、霍尔系统等对样品的形貌、结构和导电性能进行了表征.结果表明,随着氩气与氢气流量比的增加,膜的晶粒尺寸由微米级向纳米级转变,并且膜中非晶碳成分增多,膜的导电性能变好. |
| 关 键 词： | 直流热阴极PCVD 氩气 硼掺杂 纳米金刚石膜 |
Influence of Ar/H2 flow ratio on boron-doped nanocrystalline diamond films |
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| JIANG Zhao-yan,PENG Hong-yan,JIANG Hong-wei,YIN Long-cheng. Influence of Ar/H2 flow ratio on boron-doped nanocrystalline diamond films[J]. Vacuum(China), 2011, 48(5) | |
| Authors: | JIANG Zhao-yan PENG Hong-yan JIANG Hong-wei YIN Long-cheng |
| Affiliation: | JIANG Zhao-yan,PENG Hong-yan,JIANG Hong-wei,YIN Long-cheng(Key Laboratory of New Carbon-base Functional and Superhard Material of Heilongjiang Province,Mudanjiang Normal College,Mudanjiang 157012,China) |
| Abstract: | Boron-doped nanocrystalline diamond films were deposited on p-type Si substrates with B(OCH3)3 as boron source by DC hot-cathode plasma chemical vapour deposition(PCVD) with different Ar/H2 flow ratios.The effect of Ar/H2 flow ratio on the boron-doped diamond film growth was investigated.The surface morphology,structure and conductivity of the samples were analyzed by SEM,XRD,Raman spectroscopy and Hall system.The results showed that,with the increase of Ar/H2 flow ratio,the grain sizes of the films decreas... |
| Keywords: | DC hot-cathode PCVD Ar boron-doped nanocrystalline diamond film |
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