| PLD法制备ZnO/Si异质结的I-V特性研究 |
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| 引用本文： | 夏雨,梁齐,粱金. PLD法制备ZnO/Si异质结的I-V特性研究[J]. 真空, 2011, 48(5) |
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| 作者姓名： | 夏雨 梁齐 粱金 |
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| 作者单位： | 合肥工业大学电子科学与应用物理学院,安徽合肥,230009 |
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| 基金项目： | 合肥工业大学创新实验资助项目(cxsy10220) |
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| 摘 要： | 用脉冲激光沉积法分别在不同电阻率的p型和n型Si( 100)衬底上制备了不掺杂ZnO薄膜,相应制成n-ZnO/p-Si和n-ZnO/n-Si异质结器件.利用X射线衍射和原子力显微镜对ZnO薄膜进行的结构和形貌测试表明,薄膜结晶情况良好,具有高度的c轴择优取向,表面颗粒大小、分布均匀.对器件的I-V特性测试表明,在无光条件下,制备的n-ZnO/p-Si异质结漏电流很低,而n-ZnO/n-Si同型异质结漏电流要稍大一些；随衬底电阻率的增大,上述器件的阈值电压变小；器件在光照下的漏电流明显比无光条件下的要大.
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| 关 键 词： | PLD ZnO/Si异质结 I-V特性 |
I-V characteristics of ZnO/Si heterojunctions fabricated by pulsed laser deposition |
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| XIA Yu,LIANG Qi,LIANG Jin. I-V characteristics of ZnO/Si heterojunctions fabricated by pulsed laser deposition[J]. Vacuum(China), 2011, 48(5) |
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| Authors: | XIA Yu LIANG Qi LIANG Jin |
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| Affiliation: | XIA Yu,LIANG Qi,LIANG Jin(School of Electronic Science and Applied Physics,Heifei University of Technology,Hefei 230009,China) |
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| Abstract: | Un-doped ZnO films were prepared respectively on p-Si(100) and n-Si(100) substrates with different resistivity by pulsed laser deposition(PLD),then the n-ZnO/p-Si and n-ZnO/n-Si heterojunctions were accordingly fabricated.The structure and morphology of ZnO films were characterized by X-ray diffraction(XRD) and atomic force microscope(AFM).The results show that the films crystallize well with high c-axis orientation,and the size and distribution of grains on the surface are uniform.The I-V characteristics o... |
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| Keywords: | PLD ZnO/Si heterojunction I-V characteristics |
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