Lu_2O_3:Tb薄膜的制备、结构和发光性能

采用Pechini溶胶-凝胶法结合旋涂技术在单晶硅衬底上制备出了均匀、无裂纹的掺Tb3+的Lu2O3(Lu2O3:Tb)薄膜。用热重-差示扫描量热法分析了前驱体干凝胶在室温至1000℃下发生的热分解现象。利用X射线衍射和Fourier红外光谱和原子力显微镜研究了热处理温度对Lu2O3:Tb薄膜的晶相、化学组成和表面形貌的影响。结果表明:在550～1000℃间热处理的Lu2O3:Tb薄膜为多晶氧化镥立方结构,晶粒尺寸随温度升高而逐渐长大至30nm左右。在220nm紫外光激发下,Lu2O3:Tb薄膜呈现出较强的绿光发射,主发射峰分别位于542nm和551nm处。随着热处理温度的提高,Lu2O3:Tb薄膜中缺陷减少,发光强度增强。

PREPARATION, STRUCTURE AND LUMINESCENCE PROPERTIES OF Lu_2O_3:Tb FILMS

Uniform and crack free Tb~(3+) doped lutetium oxide (Lu_2O_3:Tb) films were prepared by Pechini sol-gel method combined with the spin-coating technique. The thermal decomposition behavior of the dried gel precursor from room temperature to 1 000 ℃ was analyzed by a thermogravimetry-differential scanning calorimetry. Effects of the heat-treatment temperature on the phase composition, structural characters and surface morphology of Lu_2O_3:Tb films were investigated by X-ray diffraction, Fourier transformed infrared spectroscopy and atomic force microscope. The results show that the films heat-treated between 550-1 000 ℃ have a Lu_2O_3 polycrystalline state with cubic structure, and its grain size grows to around 30 nm with the increasing of the temperature. The main luminescence emission peaks of Lu_2O_3:Tb films excited by a 220 nm light are located at 542 and 551 nm. With the raising of the annealing temperature, the defect in the Lu_2O_3:Tb films decreases and the luminescence emission intensity of films increases.