Investigation of photoresist-specific optical proximity effect

Optical proximity effects arising from individual resist characteristics are investigated. The parameters studied are those used in photoresist exposure and development simulation using the SOLID and Prolith/2 programs. The optical proximity effect is found to be independent of the exposure parameters but greatly affected by the development process and is shown to be a function of the Mack parameter, n, which is related to the resist contrast, γ. Finally, in order to put this effect into perspective with other resist selection criteria, the development parameter, n, is also shown to be related to wall angle and depth-of-focus (DOF).

The results of this investigation will therefore enable the user to select the most appropriate photoresist for a specific application.