| 阵列式碳纳米管制备研究 |
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| 引用本文： | 孙晓刚,曾效舒. 阵列式碳纳米管制备研究[J]. 微纳电子技术, 2003, 40(9): 19-21 |
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| 作者姓名： | 孙晓刚 曾效舒 |
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| 作者单位： | 南昌大学机电学院,江西,南昌,330029 |
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| 摘 要： | CVD工艺制备碳纳米管阵列,二甲苯(C6H4(CH3)2)作为碳源气体,二茂铁(C10H10Fe)作为催化剂前驱体,反应温度为700～800℃,碳纳米管直径30～60nm,长度50～60μm。
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| 关 键 词： | 阵列式碳纳米管 碳纳米管 CVD工艺 |
| 文章编号： | 1671-4776(2003)09-0019-03 |
| 修稿时间： | 2003-02-19 |
Research and preparation of aligned carbon nanotubes |
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| SUN Xiao-gang,ZENG Xiao-shu. Research and preparation of aligned carbon nanotubes[J]. Micronanoelectronic Technology, 2003, 40(9): 19-21 |
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| Authors: | SUN Xiao-gang ZENG Xiao-shu |
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| Abstract: | Large arrays of self-oriented multiwall carbon nanotubes with dia meter of30～60nm and length of50～60ìm are grown on quartz glass.Xylen e is used as carbon source and ferrocene is used as precursor of catalyst.The r eactive temperature is between700～800℃. |
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| Keywords: | aligned carbon nanot ubes carbon nanotubes CVD process |
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