Preparation of stabilized Pb(Zn1/3Nb2/3)O3(PZN) films by the sol-gel method

Pb(Zn_1/3Nb_2/3)O₃ thick films with the perovskite structure were prepared by the sol-gel method. Niobium ethoxide Nb(OC₂H₅)₄, lead acetate Pb(CH₃COO)₂, and Zinc 2-ethylhexanoate Zn(O₂C₈H₁₅)₂ were reacted in 2-methoxyethanol to form the precursor. Titanium isopropoxide, Ti(O·i-C₃H₇)₄ and barium isopropoxide Ba(O·i-C₃H₇)₄ were added into the precursor solution to stabilize the formation of the perovskite phase. Films of upto 10 m thickness were obtained by controlling the viscosity of the solution and the dipping speed of silicon wafers. The phase evolution was investigated using differential thermal analysis (DTA) and X-ray diffraction techniques. The thickness-dependent dielectric constant of the resultant films is also reported.