Preparation of stabilized Pb(Zn1/3Nb2/3)O3(PZN) films by the sol-gel method |
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Authors: | Yi Hu |
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Affiliation: | (1) Department of Materials Engineering, Tatung Institute of Technology, Taipei, Taiwan |
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Abstract: | Pb(Zn1/3Nb2/3)O3 thick films with the perovskite structure were prepared by the sol-gel method. Niobium ethoxide Nb(OC2H5)4, lead acetate Pb(CH3COO)2, and Zinc 2-ethylhexanoate Zn(O2C8H15)2 were reacted in 2-methoxyethanol to form the precursor. Titanium isopropoxide, Ti(O·i-C3H7)4 and barium isopropoxide Ba(O·i-C3H7)4 were added into the precursor solution to stabilize the formation of the perovskite phase. Films of upto 10 m thickness were obtained by controlling the viscosity of the solution and the dipping speed of silicon wafers. The phase evolution was investigated using differential thermal analysis (DTA) and X-ray diffraction techniques. The thickness-dependent dielectric constant of the resultant films is also reported. |
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