| Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots |
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| 引用本文： | WEIQuan－xiang NIUZhi－chuan.Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots[J].半导体光子学与技术,2003,9(1):30-33. |
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| 作者姓名： | WEIQuan－xiang NIUZhi－chuan |
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| 作者单位： | [1]Dept.ofPhys,ShanxiUniversity,Taiyuan030006,CHN [2]Nat.Lab.forSuperlatticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,CHN |
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| 基金项目： | 国家自然科学基金，Projects of Nano-science Technology of Chinese Academy of Sciences |
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| 摘 要： | Self-organized In0.5 Ga0.5As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy(MBE) via cycled(InAs)1/(GaAs)1 monolayer deposition method.Photoluminescence(PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time,indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As islands structure.Our results provide important information for optimizing the epitaxial structures of 1.3μm wavelength quantum dot （QD） devices.
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| 关 键 词： | 量子点 光致发光 分子束外延法 半导体 |
| 收稿时间： | 2002/9/3 |
Surface Morphology and Photoluminescence of 1.3μm Wavelength In(Ga)As/GaAs Quantum Dots |
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| WEI Quan-xiang,NIU Zhi-chuan.Surface Morphology and Photoluminescence of 1.3μm Wavelength In(Ga)As/GaAs Quantum Dots[J].Semiconductor Photonics and Technology,2003,9(1):30-33. |
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| Authors: | WEI Quan-xiang NIU Zhi-chuan |
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| Abstract: | Self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)1/(GaAs)1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices. |
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| Keywords: | Quantum dot Molecular beam epitaxy Photoluminescence CLC number:TN248 4 Document code: |
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