| 多栅GaAs MESFET开关的结构设计 |
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| 引用本文： | 陈新宇,郝西萍,陈继义.多栅GaAs MESFET开关的结构设计[J].半导体学报,2004,25(4):450-453. |
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| 作者姓名： | 陈新宇 郝西萍 陈继义 |
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| 作者单位： | 南京电子器件研究所,南京210016 |
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| 摘 要： | 论述了多栅开关的结构和特点.针对多栅开关器件结构设计中的参数栅栅间距的选取作了分析,确定当栅栅间距等于源漏间距对栅数的平均值时,开关性能最优,并在实验中得到验证
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| 关 键 词： | 多栅 开关 金属半导体场效应晶体管 砷化镓 栅栅间距 |
| 文章编号： | 0253-4177(2004)04-0450-04 |
| 修稿时间： | 2003年7月5日 |
Multi-Gate GaAs MESFET Switch |
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| Chen Xinyu,Hao Xiping and Chen Jiyi..Multi-Gate GaAs MESFET Switch[J].Chinese Journal of Semiconductors,2004,25(4):450-453. |
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| Authors: | Chen Xinyu Hao Xiping and Chen Jiyi |
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| Abstract: | The structure and characteristic of multi-gate switch are described.A fundamental problem in switch design is to maintain low insertion loss when improving power handling capacity.Multi-gate switch solves the problem due to its typical structure.The optimality analysis of the distance between gates in the design of triple-gates switches is described.The results are verified by comparing two structures of triple-gate switches with the measured results. |
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| Keywords: | multi-gates switch MESFET GaAs distance between gates |
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