A 2-nW 1.1-V self-biased current reference in CMOS technology |
| |
Authors: | Camacho-Galeano E.M. Galup-Montoro C. Schneider M.C. |
| |
Affiliation: | Electr. Eng. Dept., Fed. Univ. of Santa Catarina, Florianopolis, Brazil; |
| |
Abstract: | This work presents the design of an ultra-low-power self-biased 400-pA current source. We propose the use of a very simple topology along with a design methodology based on the concept of inversion level. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ in the AMI 1.5-/spl mu/m CMOS technology and power consumption around 2 nW for 1.2-V supply. Simulated and experimental results validate the design and show that the current source can operate at supply voltages down to 1.1 V with a good regulation (<6% /V variation of the supply voltage) in a 1.5-/spl mu/m technology. |
| |
Keywords: | |
|
|