| 含双层GST的低功耗CRAM存储元结构设计 |
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| 引用本文： | 李娟,王嘉赋,向宏酉. 含双层GST的低功耗CRAM存储元结构设计[J]. 微电子学, 2009, 39(2) |
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| 作者姓名： | 李娟 王嘉赋 向宏酉 |
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| 作者单位： | 1. 武汉理工大学,理学院,物理科学与技术系,武汉,430070
2. 武汉理工大学,理学院,物理科学与技术系,武汉,430070;材料复合新技术国家重点实验室,武汉,430070 |
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| 摘 要： | 基于热场分析,在CRAM存储元传统结构的加热层和底电极之间插入一层存储介质GST,设计出含双层GST的CRAM存储元结构.在模拟存储元热场分布过程中引入热辐射边界条件,使模拟结果更接近实际.根据设计要求,将双层GST新型结构与传统结构的热场进行比较,结果表明,含双层GST的新型结构一方面实现了存储元与CMOS晶体管的热兼容,增强了器件的稳定性;另一方面,将reset电流减小到0.5 mA,降低了器件功耗.
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| 关 键 词： | 存储元 热场分析 双层GST 热兼容 |
Design of Low Programming Current CRAM Cell Structure with Double GST |
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| LI Juan,WANG Jiafu,XIANG Hongyou. Design of Low Programming Current CRAM Cell Structure with Double GST[J]. Microelectronics, 2009, 39(2) |
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| Authors: | LI Juan WANG Jiafu XIANG Hongyou |
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| Affiliation: | 1 Dept.of Physical Science and Technology;Wuhan University of Technology;Wuhan 430070;P.R.China;2 State Key Laboratory of Advanced Technology for Material Synthesis and Processing;P.R.China |
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| Abstract: | Based on thermal analysis,a novel CRAM cell structure with double GST was designed by inserting an extra GST layer between heater and bottom electrode of the typical cell.In the new structure,thermal compatibility of the CRAM cell with CMOS transistors was achieved,which improved the stability of the device.With the double-GST cell,the programming current was reduced to 0.5 mA. |
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| Keywords: | CRAM |
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