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真空蒸馏法制备高纯碲
引用本文:高远,吴昊,程华月,蒋玉思. 真空蒸馏法制备高纯碲[J]. 有色金属(冶炼部分), 2007, 0(1): 20-22
作者姓名:高远  吴昊  程华月  蒋玉思
作者单位:广州有色金属研究院稀有金属研究所,广州,510650
摘    要:采用真空蒸馏法提纯4N(99.99%)碲,在550℃、0.5Pa的动态真空条件下,大部分杂质从86×10-6降到7×10-6。延长冷凝段长度,蒸汽压比碲高的杂质(除Se外),即Cd、Zn和As明显减少。5N(99.999%)碲总的收率达到97%,平均蒸馏速度1.4×10-4g/(cm2.s)。

关 键 词:  提纯  真空蒸馏  ICP-OES分析
文章编号:1007-7545(2007)01-0020-03

Preparation of High Purity Tellurium by Vacuum Distillation Technique
GAO Yuan,WU Hao,CHENG Hua-yue,JIANG Yu-si. Preparation of High Purity Tellurium by Vacuum Distillation Technique[J]. Nonferrous Metals(Extractive Metallurgy), 2007, 0(1): 20-22
Authors:GAO Yuan  WU Hao  CHENG Hua-yue  JIANG Yu-si
Abstract:The 4N(99.99%) tellurium is purified by vacuum distillation under 550℃ and 0.5 Pa,the majority impurities were drastically reduced from 86×106·to 7×10-6.High vapour pressure impurities except Se in tellurium melt, namely Cd,Zn and As were considerably reduce in extending condensation segment.The overall yield rate of 5N(99.999%) tellurium was up to 97% at an average distillation rate of 1.4×10-4 g/(cm2·s).
Keywords:Tellurium  Purification  Vacuum distillation  ICP-OES analysis
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