| 溅射法制备InSb薄膜工艺探索—In与Sb的原子比问题 |
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| 引用本文： | 温作晓,孙承松,魏永广,关艳霞,周立军. 溅射法制备InSb薄膜工艺探索—In与Sb的原子比问题[J]. 仪表技术与传感器, 2001, 0(7): 35-36 |
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| 作者姓名： | 温作晓 孙承松 魏永广 关艳霞 周立军 |
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| 作者单位： | 1. 东南大学微电子中心南京市 210096
2. 沈阳工业大学信息学院沈阳市 110023 |
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| 摘 要： | 介绍一种基于原子比为1：1的InSb靶制备原子比为1：1的InSb薄膜的方法，实验结果表明，该方法能较好地解决类似化合物溅射制膜过程中膜成分与靶偏离问题。
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| 关 键 词： | 溅射 InSb薄膜 原子比 磁敏元件 磁敏传感器 |
| 修稿时间： | 2000-11-23 |
The Technological Probe of InSb Film by RF Sputtering -The Problem About Atomic Ratio of In to Sb |
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| Wen Zuoxiao Microelectronics Center Southeast University,Nanjing Sun Chengsong,Wei Yongguan,Guan Yanxia,Zhou Lijun Shenyang University of Technology,Shenyang. The Technological Probe of InSb Film by RF Sputtering -The Problem About Atomic Ratio of In to Sb[J]. Instrument Technique and Sensor, 2001, 0(7): 35-36 |
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| Authors: | Wen Zuoxiao Microelectronics Center Southeast University Nanjing Sun Chengsong Wei Yongguan Guan Yanxia Zhou Lijun Shenyang University of Technology Shenyang |
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| Affiliation: | Wen Zuoxiao Microelectronics Center Southeast University,Nanjing 210096 Sun Chengsong,Wei Yongguan,Guan Yanxia,Zhou Lijun Shenyang University of Technology,Shenyang 110023 |
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| Abstract: | This paper introduces a method of fabricating InSb thin film by RF sputtering in which the ratio of In to Sb is 1:1. A 1:1(the ratio of In to Sb) InSb target was used. The test results are analyzed. The experimental results indicate that in the sputtering fabrication process of the analogous compounds this method is good to the departure between the film's ingredients and target. |
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| Keywords: | RF Sputtering InSb Film Atomic Ratio Technique |
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