| 耦合GaN/AlxGa1-xN量子点中的激子特性 |
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| 引用本文： | 危书义,吴花蕊,夏从新,黄文登.耦合GaN/AlxGa1-xN量子点中的激子特性[J].液晶与显示,2005,20(3):190-194. |
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| 作者姓名： | 危书义 吴花蕊 夏从新 黄文登 |
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| 作者单位： | 河南师范大学,物理与信息工程学院,河南,新乡,453007 |
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| 基金项目： | 河南省教育厅自然科学基础研究计划项目(No.2003140027，2004140003)，河南省高校青年骨干教师资助计划 |
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| 摘 要： | 在有效质量近似下，运用变分方法，考虑到量子点内电子和空穴的三维束缚以及由压电极化和自发极化所引起的内建电场，对圆柱型耦合GaN量子点的光学性质及激子态做了研究。给出了激子结合能Eb、量子点发光波长λ、电子-空穴复合率和量子点高度L^GaN以及势垒层厚度L^AlGaN之间的函数关系。结果表明，量子点高度LG^GaN、势垒层厚度L^AlGaN的增加将导致激子结合能、电子-空穴复合率的降低，耦合量子点发光波长的增加。
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| 关 键 词： | 耦合量子点 压电极化 自发极化 量子约束斯塔克效应 带间光跃迁 |
| 文章编号： | 1007-2780(2005)03-0190-05 |
| 修稿时间： | 2004年10月22 |
Exciton Confined in GaN/AlxGa1-xN Coupled Quantum Dots |
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| WEI Shu-yi,WU Hua-rui,Xia Cong-Xin,HUANG Wen-deng.Exciton Confined in GaN/AlxGa1-xN Coupled Quantum Dots[J].Chinese Journal of Liquid Crystals and Displays,2005,20(3):190-194. |
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| Authors: | WEI Shu-yi WU Hua-rui Xia Cong-Xin HUANG Wen-deng |
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| Abstract: | This paper presents a fully three-dimensional study of the exciton optical response of vertically coupled GaN-based quantum dot via a variational approach within the framework of effective-mass approximation. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of coupled QDs is studied in detail. The numerical results show that with the increase of the height of quantum dat (the barrier thickness),the exciton energy and electron-hole recombination rate are reduced and the quantum dot emission wavelength is increased. |
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| Keywords: | coupled quantum dots piezoelectric polarization spontaneous polarization quantum-confined Stark effect (QCSE) band-to-band transition |
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