Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure |
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Authors: | Khin Maung Latt Y K Lee J A Van Kan and A A Mahabai |
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Affiliation: | (1) Materials Engineering, School of Applied Science, Nanyang Technological University, Nanyang Avenue, Singapore, 639798;(2) Department of Physics, National, University of Singapore, Lower Kent Ridge Road, Singapore, 119260 |
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Abstract: | Electroplated Cu film on a thin seed layer of IMP deposited Cu has been investigated in the EPCu (1 m)/IMPCu (150 nm)/TaN (25 nm)/SiO2(500 nm)/Si multi-layer structure. The characteristics of Electroplated-Cu films before and after annealing were investigated by means of sheet resistance, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Rutherford Backscattering Spectroscopy (RBS). Annealing at temperatures of higher than 750°C resulted in slightly higher sheet resistance, larger grain sizes and rougher surface. SEM micrograph showed that the agglomeration of EP-Cu film occurred only at annealing temperatures higher than 850°C. During annealing, the EP-Cu grain grew normally and their sizes increased to about five times larger than the thickness of the EP-Cu film but the (111) preferred orientation was maintained up to 950°C. Furthermore, the interfacial reactions between Cu layer and IMP-TaN diffusion barrier were also detected at annealing temperatures of higher than 750°C. |
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