Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes |
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Authors: | Bour D.P. Kneissl M. Romano L.T. McCluskey M.D. Van deWalle C.G. Krusor B.S. Donaldson R.M. Walker J. Dunnrowicz C.J. Johnson N.M. |
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Affiliation: | Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA; |
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Abstract: | We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm. The lowest threshold current density obtained was 20 kA/cm2 with maximum output powers of 50 mW. Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length. Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm-1 |
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