GaAs/GaAlAs异质结双极型微波晶体管的研制和性能

本文介绍了砷化镓-镓铝砷Npn异质结双极型晶体管的设计原理.分析了该管在高频特性、开关特性、温度特性方面超过Si平面管的潜在优越性.叙述了制管工艺与直流、高频和温度特性等实验结果.给出了一个细线条结构的Npn GaAs晶体管作为进一步考察高频和噪声性能的实例.理论计算表明:该管的最大振荡频率f_(max)可高达88GHz,在12GHz下的噪声系数为1.2dB.讨论了NpnGaAs平面晶体管和倒置晶体管的结构及其优点.最后比较了GaAs双极型管和GaAs MESFET的优缺点.

Evaluation,Fabrication and Performances of a GaAs/GaAIAs Heterojunction Microwave Bipolar Transistor

In this paper, the design principle of an Npn GaAs heterojunction bipolar transistor is described and its potential advantages in high frequency performance, pulse performance and temperature behavior over a Si planar transistor are analyzed. The fabrication processes and measurement results including I-V characteristics, high frequency performance and temperature behavior are presented. To show the potential advantages in high frequeucy and low noise performances, an Npn GaAs transistor with a fine structure, as an example, is proposed. Theoretical calculation shows that the transistor with a maximum frequency of oscillation/max as high as 88GHz and a noise figure NF as low as 1.2dB at 12GHz can be reached. A planar structure and an up-side-down structure for GaAs transistors and their advantages are also analyzed. Finally, the advantages and the drawbacks of the GaAs bipolar transistor compared with the GaAs MESFET are briefly outlined.