The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures |
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Authors: | F Huet M-A Di Forte-Poisson M Calligaro J Olivier F Wyczisk J Di Persio |
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Affiliation: | (1) Thomson-CSF/Laboratoire Central de Recherches, Domaine de Corbeville, 91404 ORSAY Cedex, France;(2) Laboratoire de Structure et Propriétés de l’Etat Solide, Université des Sciences et Technologies de Lille, 59655 VILLENEUVE d’ASCQ Cedex, France |
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Abstract: | The effect of rapid thermal annealing (RTA) on Ni/Au contacts on P-type GaN was investigated in terms of surface morphology
and diffusion depth of metallic species. Ni/Au contacts were evaporated on the P-type 0.5 μm thick top layer of a GaN P/N
homojunction. Optical micrographs revealed that the contact morphology degrades when annealed above 800°C for 1 min. At the
same time, both Ni and Au atoms strongly diffuse in the P-type layer and even can reach the junction for a 1 min long annealing
at 900°C, therefore making the junction structure unoperable. This behavior was evidenced using the Auger voltage contrast
(AVC) technique. |
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Keywords: | Ni/Au contact GaN P/N junction rapid thermal annealing Auger voltage contrast |
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