| 表面氧含量对高纯硅粉高温氮化行为的影响 |
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| 引用本文： | 兰宇,李兵,周子皓,张以纯,尹传强,魏秀琴,周浪.表面氧含量对高纯硅粉高温氮化行为的影响[J].材料导报,2018,32(16):2719-2722. |
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| 作者姓名： | 兰宇 李兵 周子皓 张以纯 尹传强 魏秀琴 周浪 |
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| 作者单位： | 南昌大学光伏研究院/材料科学与工程学院 |
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| 基金项目： | 江西省优势科技创新团队计划专项(20113BCB24007)；有色金属及特色材料加工重点实验室开放基金(12KF-20)；南昌大学研究生创新专项资金立项项目(CX2016017) |
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| 摘 要： | 研究了表面氧含量对高纯硅原料在氮氢气氛下直接氮化行为的影响,并合成高α相氮化硅。研究结果表明,硅粉在氮氢气氛下1 350℃保温3h,氮化产物中α-Si_3N_4含量随原料氧含量的增加呈先增加后减少的趋势,当硅原料表面氧含量为3.91%时,氮化产物中α-Si_3N_4含量可达97%以上,残留硅含量低于1%,产物中部氧含量为1.71%,在此环境下硅粉氮化主要以化学气相沉积的方式进行,产物形貌以杆状α-Si_3N_4晶须为主。硅原料表面氧含量低于4.38%时,氮化产物α-Si_3N_4含量均在95%以上,另有少量的β-Si_3N_4和残留硅,XRD测试精度范围内无氮氧化硅相存在。当硅原料氧含量高于5.61%时,产物中则出现氮氧化硅,随着原料氧含量增加,氮氧化硅含量明显上升。当硅原料氧含量低于5.61%时,残留硅含量随氧含量增加明显减少,说明原料中氧的增加可以显著加快氮化速率,降低氮化产物中残留硅的含量。
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| 关 键 词： | α-氮化硅 氧含量 直接氮化法 高纯硅粉 氮氧化硅 |
Effects of Surface Oxygen Content on the High-temperature Nitridation of High-purity Silicon Powders |
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| LAN Yu,LI Bing,ZHOU Zihao,ZHANG Yichun,YIN Chuanqiang,WEI Xiuqin and ZHOU Lang.Effects of Surface Oxygen Content on the High-temperature Nitridation of High-purity Silicon Powders[J].Materials Review,2018,32(16):2719-2722. |
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| Authors: | LAN Yu LI Bing ZHOU Zihao ZHANG Yichun YIN Chuanqiang WEI Xiuqin and ZHOU Lang |
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| Affiliation: | Institute of Photovoltaics/School of Materials Science and Engineering, Nanchang University, Nanchang 330031,Institute of Photovoltaics/School of Materials Science and Engineering, Nanchang University, Nanchang 330031,Institute of Photovoltaics/School of Materials Science and Engineering, Nanchang University, Nanchang 330031,Institute of Photovoltaics/School of Materials Science and Engineering, Nanchang University, Nanchang 330031,Institute of Photovoltaics/School of Materials Science and Engineering, Nanchang University, Nanchang 330031,Institute of Photovoltaics/School of Materials Science and Engineering, Nanchang University, Nanchang 330031 and Institute of Photovoltaics/School of Materials Science and Engineering, Nanchang University, Nanchang 330031 |
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