Very high temperature operation of diamond Schottky diode |
| |
| Authors: | Vescan A. Daumiller I. Gluche P. Ebert W. Kohn E. |
| |
| Affiliation: | Dept. of Electron. Devices & Circuits, Ulm Univ.; |
| |
| Abstract: | For the first time, the operating temperature of a Schottky diode structure has been pushed to 1000°C. The diode structure consists of a Si-based Schottky material deposited onto a homoepitaxial boron doped diamond surface. At high temperatures, the forward I-V characteristics are dominated by the thermionic emission (n≈1.01) across a barrier of 1.9 eV height. The reverse characteristics are still dominated by thermally activated defects. The series resistance shows thermal activation associated with the boron doping |
| |
| Keywords: | |
|
|
